The effect of chemistry and thermal fluctuations on charge injection barriers at aluminum/polyolefin interfaces

Charge injection at metal/polymer interfaces is a critical process in many technological devices, including high voltage capacitors and cables in which polyolefin materials, such as polyethylene (PE) and polypropylene (PP), are often used as insulation materials. We use simulations based on density-functional theory to study charge injection at aluminum/PE and aluminum/PP interfaces. Specifically, we investigate the influence of incorporating a variety of polar chemical impurities at the PE and PP chain ends on electron and hole injection barriers. Crucially, we account for the effect of thermal disorder by considering ensembles of thousands of interface structures obtained from ab initio molecular dynamics trajectories at 373 K. We show that the mean injection barrier can change by up to 1.1 eV for Al/PE and 0.6 eV for Al/PP, as compared to the pristine case, depending on which chemical impurity is introduced. We also show that the spread of injection barriers from thermal fluctuations also depends strongly on the chemistry of the impurity. The observed trends can be understood with a simple model based on thermal fluctuations of the dipole moment density associated with the chemical impurity at the interface. We further verify this model by considering larger interface models with lower impurity densities. Our results demonstrate that small chemical modifications, which may arise from oxidation, for example, have a significant influence on charge injection barriers in metal/polyolefin interfaces

Survey of chemical manure on morphological traits in Iranian Aloe vera

This experiment was conducted at the Institute of National Genetic Engineering and Biotechnology in Iran to evaluate the effect of different amount of fertilizers on the leaf and plant characteristics, as well as the yield characteristics of Aloe vera. There were 6 different treatments viz., T1 = 100% soil (control), T2 = 100 PK (50% P + 50% K), T3 = 50% K + 50% soil, T4 = 50% N + 50% soil, T5 = 150% NPK (50% N + 50% P + 50% K), T6 = 50% P + 50% soil. It was observed that the plant produced the highest mature leaf length and number of tillers plant-1 and maximum leaf weight as well as maximum weight of largest leaves with the application of 50% P + 50% K (T2). Different plant characters such as mature leaf breadth and breadth of the largest leaf was also found to be high with T5 treatment when compared with the control (100% soil). The number of leaves was also significantly affected by different fertilizer treatments where the maximum effect was noticed at early stages with T4 (50% N). It was revealed that T3 had a little effect on the number of leaves of A. vera over chemical fertilizer.Key words: Aloe vera, fertilizer, morphological traits, leaf growth

The Antiquity of the Avesta

Paper read before the Bombay Branch of the Royal Asiatic Society, read 26th June 1896. Dr. Gerson Da Cunha in the Chair

First-principles study on the origin of large thermopower in hole-doped LaRhO3 and CuRhO2

Based on first-principles calculations, we study the origin of the large thermopower in Ni-doped LaRhO3 and Mg-doped CuRhO2. We calculate the band structure and construct the maximally localized Wannier functions from which a tight binding Hamiltonian is obtained. The Seebeck coefficient is calculated within the Boltzmann's equation approach using this effective Hamiltonian. For LaRhO3, we find that the Seebeck coefficient remains nearly constant within a large hole concentration range, which is consistent with the experimental observation. For CuRhO2, the overall temperature dependence of the calculated Seebeck coefficient is in excellent agreement with the experiment. The origin of the large thermopower is discussed.Comment: 7 pages, to be published J. Phys.: Cond. Matt., Proc. QSD 200

Robotic Wireless Sensor Networks

In this chapter, we present a literature survey of an emerging, cutting-edge, and multi-disciplinary field of research at the intersection of Robotics and Wireless Sensor Networks (WSN) which we refer to as Robotic Wireless Sensor Networks (RWSN). We define a RWSN as an autonomous networked multi-robot system that aims to achieve certain sensing goals while meeting and maintaining certain communication performance requirements, through cooperative control, learning and adaptation. While both of the component areas, i.e., Robotics and WSN, are very well-known and well-explored, there exist a whole set of new opportunities and research directions at the intersection of these two fields which are relatively or even completely unexplored. One such example would be the use of a set of robotic routers to set up a temporary communication path between a sender and a receiver that uses the controlled mobility to the advantage of packet routing. We find that there exist only a limited number of articles to be directly categorized as RWSN related works whereas there exist a range of articles in the robotics and the WSN literature that are also relevant to this new field of research. To connect the dots, we first identify the core problems and research trends related to RWSN such as connectivity, localization, routing, and robust flow of information. Next, we classify the existing research on RWSN as well as the relevant state-of-the-arts from robotics and WSN community according to the problems and trends identified in the first step. Lastly, we analyze what is missing in the existing literature, and identify topics that require more research attention in the future

Half-metallic Antiferromagnet BaCrFeAs2

First-principles calculations and a tight-binding analysis predict that the iron-pnictide BaCrFeAs2 is a promising candidate for half-metallic material with fully-compensated magnetization. The transition-metal ions Cr and Fe prefer the three-dimensional intervening lattice, which yields the antiferromagnetic order of spin orientations. Due to the difference between Cr and Fe in the electronegativity, a band gap is opened at the Fermi level in the spin channel in which Fe provides the majority carriers. The selective hybridization between 3d orbitals of Cr and As:4p states due to the peculiar lattice structure of the iron-pnictide is shown to be crucial for the novel properties.Comment: added reference

Emergence of non-centrosymmetric topological insulating phase in BiTeI under pressure

The spin-orbit interaction affects the electronic structure of solids in various ways. Topological insulators are one example where the spin-orbit interaction leads the bulk bands to have a non-trivial topology, observable as gapless surface or edge states. Another example is the Rashba effect, which lifts the electron-spin degeneracy as a consequence of spin-orbit interaction under broken inversion symmetry. It is of particular importance to know how these two effects, i.e. the non-trivial topology of electronic states and Rashba spin splitting, interplay with each other. Here we show, through sophisticated first-principles calculations, that BiTeI, a giant bulk Rashba semiconductor, turns into a topological insulator under a reasonable pressure. This material is shown to exhibit several unique features such as, a highly pressure-tunable giant Rashba spin splitting, an unusual pressure-induced quantum phase transition, and more importantly the formation of strikingly different Dirac surface states at opposite sides of the material.Comment: 5 figures are include

wannier90: A tool for obtaining maximally-localised Wannier functions

We present Wannier90, a program for calculating maximally-localised Wannier functions (MLWF) from a set of Bloch energy bands that may or may not be attached to or mixed with other bands. The formalism works by minimising the total spread of the MLWF in real space. This done in the space of unitary matrices that describe rotations of the Bloch bands at each k-point. As a result, Wannier90 is independent of the basis set used in the underlying calculation to obtain the Bloch states. Therefore, it may be interfaced straightforwardly to any electronic structure code. The locality of MLWF can be exploited to compute band-structure, density of states and Fermi surfaces at modest computational cost. Furthermore, Wannier90 is able to output MLWF for visualisation and other post-processing purposes. Wannier functions are already used in a wide variety of applications. These include analysis of chemical bonding in real space; calculation of dielectric properties via the modern theory of polarisation; and as an accurate and minimal basis set in the construction of model Hamiltonians for large-scale systems, in linear-scaling quantum Monte Carlo calculations, and for efficient computation of material properties, such as the anomalous Hall coefficient. Wannier90 is freely available under the GNU General Public License from http://www.wannier.org/Comment: Submitted to Computer Physics Communication

Emergent quantum confinement at topological insulator surfaces

Bismuth-chalchogenides are model examples of three-dimensional topological insulators. Their ideal bulk-truncated surface hosts a single spin-helical surface state, which is the simplest possible surface electronic structure allowed by their non-trivial $\mathbb{Z}_2$ topology. They are therefore widely regarded ideal templates to realize the predicted exotic phenomena and applications of this topological surface state. However, real surfaces of such compounds, even if kept in ultra-high vacuum, rapidly develop a much more complex electronic structure whose origin and properties have proved controversial. Here, we demonstrate that a conceptually simple model, implementing a semiconductor-like band bending in a parameter-free tight-binding supercell calculation, can quantitatively explain the entire measured hierarchy of electronic states. In combination with circular dichroism in angle-resolved photoemission (ARPES) experiments, we further uncover a rich three-dimensional spin texture of this surface electronic system, resulting from the non-trivial topology of the bulk band structure. Moreover, our study reveals how the full surface-bulk connectivity in topological insulators is modified by quantum confinement.Comment: 9 pages, including supplementary information, 4+4 figures. A high resolution version is available at http://www.st-andrews.ac.uk/~pdk6/pub_files/TI_quant_conf_high_res.pd